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BUT11AF DATASHEET PDF

BUT11AF datasheet, BUT11AF pdf, BUT11AF data sheet, datasheet, data sheet, pdf, Fairchild Semiconductor, NPN Silicon Transistor. BUT11AF. GENERAL DESCRIPTION. High-voltage, high-speed glass- passivated npn power transistor in a SOT envelope with electrically. BUT11AF NPN Silicon Transistor. Absolute Maximum Ratings TC=25°C unless otherwise noted. Symbol VCBO Parameter Collector-Base Voltage: BUT11AF.

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August 2 Rev 1. August 8 Rev 1.

Exposure to limiting values for extended periods may affect device reliability. Typical DC current gain. SOT; The seating plane is electrically isolated from all terminals.

Test circuit for VCEOsust. Typical base-emitter saturation voltage. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice.

No liability will be accepted by the publisher for any consequence of its use. August 7 Rev 1. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Reverse bias safe operating area. Switching times waveforms with resistive load. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

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Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

BUT11AF Datasheet(PDF) – Savantic, Inc.

Test circuit inductive load. Oscilloscope display for VCEOsust. Refer to mounting instructions for F-pack envelopes. Product specification This data sheet contains final product specifications.

Extension for repetitive pulse operation. Normalised power derating and second breakdown curves. Typical base-emitter and collector-emitter saturation voltages.

Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Observe the general handling precautions for electrostatic-discharge sensitive devices ESDs to prevent damage to MOS gate oxide.

BUT11AF Datasheet, Equivalent, Cross Reference Search

Application information Where application information is given, it is advisory and does not form part of the specification. UNIT – – 1. Forward bias safe operating area. Stress above one or more of the limiting values may cause permanent damage to the device.

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Test circuit ubt11af load. Switching times waveforms with inductive load. August 4 Ptot max and Ptot peak max lines.

Region of permissible DC operation.

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